| 摘要 |
PURPOSE:To obtain an X-ray absorbing film having low internal pressure and excellent microscopic workability by a method wherein tantalum and boron are contained within the range in which their number of atoms ratio become the prescribed ratio. CONSTITUTION:An X-ray absorbing film contains tantalum and boron within the range wherein their number of atoms ratio (Ta/B) become 8.5/1.5 to 7.5/2.5. The X-ray absorbing film containing tantalum and boron can be formed on a substrate easily at a low temperature using a sputtering method. When the X-ray absorbing film is formed by sputtering, it has advantages such as low internal stress, high density, contains no impurities, high X-ray absorbing coefficient and the like. Using the above-mentioned X-ray mask material, an X-ray mask having very fine pattern can be obtained. |
