发明名称 Diode-pumped laser system using uranium-doped crystal Q-switch
摘要 <p>A laser system (20) includes a laser resonator cavity (22) having a resonant path (46) and an Er,Yb:glass lasing element (28) with an output of from about 1.5 to about 1.6 micrometers within the laser resonator cavity (22). A diode array (32) optically pumps the lasing element (28) to emit light. A Q-switch (44) lies along the resonant path (46) within the laser resonator cavity (22). The Q-switch (44) is formed of a host material having a concentration of uranium ions therein, so as to be a saturable absorber of the light emitted by the lasing element (28). The Q-switch (44) is preferably a uranium-doped fluoride such as U:CaF2, U:SrF2, or U:BaF2. &lt;IMAGE&gt;</p>
申请公布号 EP0790683(A2) 申请公布日期 1997.08.20
申请号 EP19970300356 申请日期 1997.01.21
申请人 RAYTHEON COMPANY 发明人 STULTZ, ROBERT D.;BIRNBAUM, MILTON;SUMIDA, DAVID S.
分类号 H01S3/067;H01S3/0941;H01S3/113;H01S3/16;H01S3/17;(IPC1-7):H01S3/113;H01S3/094 主分类号 H01S3/067
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