| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film transistor in which a drain electrode part and a drain region can be electrically connected in a stable manner. SOLUTION: A semiconductor film 3 is formed, a gate insulating film 4 is formed thereon, and then the first contact hole is perforated on the gate insulating film 4 on a source region 6 and a drain region 7. The contact hole is covered by the first conductive material 8, an interlayer insulating film 9 is formed, and the second contact hole is perforated on the first conductive material 8 formed on the source region 6 and the drain region 7.</p> |
