| 摘要 |
PROBLEM TO BE SOLVED: To realize a CMOS semiconductor device which receives a low-voltage input signal, performs level conversion to an amplitude of±30V and outputs the resulting signal, for example, for driving a liquid crystal display, and to realize high speed, low power consumption, and reduction in the number of components. SOLUTION: A p-well 4 is formed on a surface layer of an n-well 3 formed on a surface layer of a p-substrate 1, and an n-channel MOS FET is formed therein. Thus, the electric potential of source and drain is determined separately from the electric potential of the substrate. A logic circuit section of a low- voltage CMOS unit 10 thus constituted, a level shifter 1 for receiving a signal from the logic circuit section and performing level conversion to the electric potential of the substrate, a level, shifter 2 for performing level conversion to a high-voltage potential of reverse polarity, and a high-voltage CMOS unit 20 with an output circuit operating between the electric potential of the substrate and the high-voltage potential of reverse polarity are integrated to form a CMOS semiconductor device.
|
