Method of fabricating a semiconductor laser device

摘要

A semiconductor laser device includes: a lower cladding layer; an upper cladding layer having a bottom and a strip-shaped ridge portion projecting from the bottom; a II-VI compound semiconductor active layer interposed between the lower cladding layer and the upper cladding layer; and a burying blocking layer made of an aromatic polyamide resin formed on a bottom of the upper cladding layer so as to be in contact with sides of the stripe-shaped ridge portion.