| 摘要 |
PROBLEM TO BE SOLVED: To suppress generation of defects caused by static electricity in the manufacturing process of an active matrix indication device. SOLUTION: In the manufacturing process in which an active matrix circuit 108 and a peripheral drive circuits 104 and 105 are integrated, a protective capacitor, to be connected to a short ring utilizing the semiconductor layer of the material same as the active layer of a thin film transistor located on the lower part of the short ring 102, is formed. This protective capacitor has the function which absorbs the electric pulse generated when a plasma utilization process is conducted. Also, the influence of electric pulse upon each circuit can be prevented by providing discharge patterns 103, 106 and 112. |
