| 摘要 |
<p>PROBLEM TO BE SOLVED: To make a substrate to be treated separate from an electrostatic chuck rapidly, smoothly and efficiently even when a residual charge exists in the substrate to be treated by a method wherein conductive gas produced in a small-capacity plasma generating chamber is fed to the substrate to be treated attracted to the electrostatic chuck and a charge stored between the substrate to be treated and the chuck is discharged. SOLUTION: A plasma treatment process ends and thereafter, a stage 12 is made to descend, a treating chamber is opened and while treatment gas is made to exhaust, a high-voltage DC voltage, which is fed to an electrostatic chuck 13, is turned off in a state that a carrying arm lies directly under a semiconductor wafer 17. A high-frequency current is fed to a hot plate 23, plasma gas 28 is generated in a small-capacity plasma generating chamber 24 and the generated plasma gas 28 is sprayed on the rear of the wafer 17 via plasma gas introducing tubes 29. As a result, a charge stored between the wafer 17 and the chuck 13 is offset with the plasma gas 28 and the wafer 17 is spontaneously separated from the chuck 13.</p> |
