FUOTOMASUKUNOKETSUSONKETSUKANSHUSEIHOHOOYOBISONOSOCHI

摘要

PURPOSE:To deposit thin films having excellent corrosion resistance and excellent line controllability at the time of correcting the chipping defect of a photomask. CONSTITUTION:A first stage for depositing the first thin film by irradiating the chipping defect part of the photomask 6 with a concentrated Q switching laser beam 2 CW (continuous oscillation) excited in a gaseous atmosphere contg. gaseous molybdenum carbonyl and a second stage for depositing the second thin film by irradiating the first thin film with the concentrated Q switching CW excited laser beam 2 different from the first stage in a chromium carbonyl gaseous atmosphere are executed in a method for correcting the chipping defect of the photomask 6 by a thermal CVD method using the CW excited Q switching laser beam 2.