发明名称 Amorphous semiconductor thin film light emitting diode
摘要 An amorphous semiconductor thin film light emitting diode comprising of a first electrode metal sheet substrate, amorphous semiconductor layers and a second optically transparent electrode. The first electrode metal sheet substrate acts as the support of the electrode and provides ruggedness, good thermal stability and dissipation of heat, good reflectance and flexibility. The device may further include electrically insulating layers which cause a pattern of light to be emitted by the diode, by controlling the passage of current through areas of the amorphous semiconductor layers.
申请公布号 US5656823(A) 申请公布日期 1997.08.12
申请号 US19950414738 申请日期 1995.03.31
申请人 CHULALONGKORN UNIVERSITY 发明人 KRUANGAM, DUSIT
分类号 H01L33/18;H01L33/64;(IPC1-7):H01L29/04 主分类号 H01L33/18
代理机构 代理人
主权项
地址