发明名称 FERROELECTRIC THIN FILM AND METHOD FOR PRODUCING SAME
摘要 [Problem] To provide a ferroelectric thin film having excellent electrical characteristics, and a method for producing the ferroelectric thin film. [Solution] A first heat treatment (drying process) is implemented in step S6. A potassium sodium niobate precursor solution, which has been applied on a lower electrode, is heated up at a rate of temperature increase of at least 100°C/minute using a hot plate that has been pre-heated to a temperature of 350°C, and dried for three minutes. Next, a second heat treatment (baking process) is implemented in step S7. The dried potassium sodium niobate precursor film is heated up to 350°C at a rate of temperature increase of at least 100°C/minute using a heated hot plate. The potassium sodium niobate precursor film is then heated up at a rate of temperature increase of not more than 15°C/minute within a temperature range of 350°C to 700°C, and baked for 10 minutes at 700°C. A potassium sodium niobate layer is thus formed. The thickness of the potassium sodium niobate layer formed in a single application of the abovementioned step is 100 nm or less.
申请公布号 WO2012141104(A1) 申请公布日期 2012.10.18
申请号 WO2012JP59560 申请日期 2012.04.06
申请人 MURATA MANUFACTURING CO., LTD.;SHIRAKI, HIROSHI 发明人 SHIRAKI, HIROSHI
分类号 H01L41/24;C04B35/00;H01L41/18;H01L41/187 主分类号 H01L41/24
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