发明名称 Enhanced multiple block writes to adjacent blocks of memory using a sequential counter
摘要 A memory device includes an array of randomly addressable registers. Blocks of the addressable registers are addressable by an address for block writing during a block write cycle. The blocks are of the size n, wherein n is the number of bits per plane of memory being written during the block write cycle. The device further includes a sequential counter for incrementing the address by n during burst mode when a block write is performed during a block write cycle to address a next addressable register of the array of randomly addressable registers.
申请公布号 US5657287(A) 申请公布日期 1997.08.12
申请号 US19950455095 申请日期 1995.05.31
申请人 MICRON TECHNOLOGY, INC. 发明人 MCLAURY, LOREN L.;MORGAN, DONALD M.
分类号 G11C11/401;G11C7/10;G11C8/04;G11C8/12;G11C11/408;(IPC1-7):G11C7/00 主分类号 G11C11/401
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