FACET ETCH FOR IMPROVED STEP COVERAGE OF INTEGRATED CIRCUIT CONTACTS

摘要

Disclosed is a method for providing improved step coverage of contacts with conductive materials, and particularly metals. A conductive layer (14) is deposited over an insulating layer, either before or after contact opening (20) formation. After both conductive layer deposition and contact formation, a facet etch is performed to slope the conductive layer (14) overlying the contact lip (27) while depositing material from the conductive layer (14) into the lower corner (30) of the contact (20), where coverage has traditionally been poor. A second conductive layer (40) may then be deposited into the contact to supplement coverage provided by the first conductive layer (14) and the facet etch.