| 摘要 |
PROBLEM TO BE SOLVED: To provide a flash memory having no contact and a virtual ground structure, and suitable for higher degrees of integration, and method for its manufacture. SOLUTION: A plurality of buried bit lines 108 having deep junctions and shallow junctions are formed in a substrate 100. Insulating films (first insulating film pattern 102' and gate insulating film 104) having steps on the substrate 100 between the buried bit lines 108. Asymmetrical floating gate electrodes 106' are formed on the insulating films, and then a second insulating film 110 is formed on the substrate 100 including the floating gate electrodes 106. A control gate electrode 112 is formed on the second insulating film 110 to obtain a flash memory.
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