Method for setting and adjusting process parameters to maintain acceptable critical dimensions across each die of mass-produced semiconductor wafers

摘要

A method and system are disclosed for: (a) matching a machine-implemented process simulator with an actual fabrication line, (b) using the matched model to simulate the statistical results of mass production by the modeled production line, (c) using the model to predict cross-reticle variance from collected data for in-scribe features, (d) using the model to decompose the variance contributions of each process parameter and identify the more prominent contributors, and (e) using the model to identify the process parameter adjustments which would provide best leverage when taken one at a time.