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发明名称
FLOATING GATE NONVOLATILE SEMICONDUCTOR MEMORY HAVING STEP IN GATE AND ITS MANUFACTURE
摘要
申请公布号
JPH09205156(A)
申请公布日期
1997.08.05
申请号
JP19960011828
申请日期
1996.01.26
申请人
NKK CORP
发明人
TAKEUCHI NOBUYOSHI
分类号
H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824
主分类号
H01L21/8247
代理机构
代理人
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地址
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