Semiconductor memory device capable of operating with potentials of adjacent bit lines inverted during multi-bit test

摘要

A semiconductor memory device is provided which can apply a voltage stress to every adjacent bit lines even when data is written using a data bit compression function in a burn-in test mode. More specifically, when data is written using the data bit compression function in the test mode, an input buffer circuit is brought to a state in which it receives a signal corresponding to a signal dq0 applied to a specific input/output terminal by a switch circuit controlled by a test mode specify signal TE in common. When an inversion designate signal INV is in an active state, a complementary signal corresponding to a signal obtained by inversion of signal dq0 by an inverting circuit is output to internal data buses IO0, ZIO0, and IO2, ZIO2. On the other hand, a complementary signal corresponding to signal dq0 is output to internal data buses IO1, ZIO1, and IO3, ZIO3.