发明名称 MULTILAYERED STRUCTURE, SENSOR AND ITS MANUFACTURE
摘要 <p>PROBLEM TO BE SOLVED: To prevent the characteristics obtained immediately after a film is formed from being lowered by alternately forming a thin interface later made of Co or a Co rich alloy in the boundary face between a first type layer and a second type layer. SOLUTION: A first type layer 4 in which a magnetic material is used as a base is formed in a substrate 2 and thereon, a thin interface layer 6 made of Co or a Co rich alloy is formed. Next, a second type layer 8 made of Ag or an Ag rich alloy is formed. Those layers are alternately formed 10 to form multilateral magnetic structure. At that time, the composition of the magnetic material is expressed by Ni100-x-y-z Cox Fey Az , where 0<=x<=100, 0<=y<=100, 0<=z<=40, and 0<=x+y+z<=100. Also, the composition of the Ag rich alloy is expressed by Agx Cu1-x or Agx Au1-x , where 0<x<0.5.</p>
申请公布号 JPH09199325(A) 申请公布日期 1997.07.31
申请号 JP19960330036 申请日期 1996.12.10
申请人 COMMISS ENERG ATOM 发明人 BERUNAARU DEIENII;SUTEFUAN OFURU;KURISUTOFUA KOWASHIYU;FURANKU BERUTO
分类号 G01R15/20;G01R33/09;G11B5/39;H01F10/08;H01F10/32;H01L43/10;(IPC1-7):H01F10/08 主分类号 G01R15/20
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