SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To maintain the reliability concerning electrical characteristics for a long term while a fine bump electrode structure is provided by a method wherein a protruding electrode which covers the side wall of one of first and second conductor layers of which a layer-built structure is composed and, further, covers the plan-view surface of the layer-built structure is provided. SOLUTION: A barrier metal film 9 is formed so as to cover the opening part 7 of a passivation film 5. The barrier metal film 9 has a double-layer structure which consists of a first barrier metal layer 9a and a second barrier metal layer 9b. The first barrier metal layer 9a is connected to an electrode pad 3. The bottom area of the second barrier metal layer 9b is smaller than the bottom area of the first barrier metal layer 9a. A bump electrode 11 is formed over a surface including the side wall of the second barrier metal layer 9b and the part of the first barrier metal layer 9a which protrudes from the second barrier metal layer 9b along the passivation film 5.