| 摘要 |
PROBLEM TO BE SOLVED: To reduce cross modulation distortion at the operation with low bias drain current by providing unit FET's to have two or more different pinchoff voltages. SOLUTION: A drain electrode 51 that is extended from a drain pad 51a with the form of comb teeth and a source electrode 52 that is extended from a source pad 52a with the form of the comb teeth are arranged jigsawing mutually. On a semiconductor substrate 1, an active layer 2 is formed and on the active layer 2, the source electrode 52 and the drain electrode 51 that are connected to the active layer 2 ohmically are formed alternately. Especially, the unit field effect transistors with different pinchoff voltages are connected in parallel. By arranging multiple unit FET's, the change of mutual conductance near the pinchoff voltage is smoothed and the third cross modulation distortion is reduced at the operating state with the setting of low bias drain current. |
