| 摘要 |
<p>PROBLEM TO BE SOLVED: To extremely decrease a dimensional difference in resist pattern caused by a side wall of a recess, and to enable pattern transfer with a higher degree of accuracy. SOLUTION: In an exposure mask in which a substrate 11 transparent to exposure light, is formed thereon with a light shield pattern 12 and transparent openings, and has an area where the substrate is formed with recesses having depths adjusted so as to be alternately different from one another at the openings, the width d2 of the transparent opening and the size a2 of the bottoms of the recesses are substantially equal to each other, and the upper ends of the recesses are positioned inward of the edge part of the light shield pattern 12 in the area where the substrate is formed with the recesses.</p> |
