发明名称 |
Semiconductor device with an insulating film separating conductive layers and method of maufacturing semiconductor device |
摘要 |
A semiconductor device comprises a lower conductive layer formed on a semiconductor substrate, a first insulation film layer formed at least on side faces of the lower conductive layer, a second insulation film layer formed around the lower conductive layer on which the first insulation film layer has been formed, a contact hole formed on the second insulation film layer in the vicinity of a side face of the lower conductive layer, and an upper conductive layer formed in the contact hole and over the second insulation film. The first insulation film layer is of a three-film structure comprising a first oxide film, a nitride film and a second oxide film.
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申请公布号 |
US5652449(A) |
申请公布日期 |
1997.07.29 |
申请号 |
US19900617251 |
申请日期 |
1990.11.23 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHINAGAWA, TAKESHI;MORI, SEIICHI |
分类号 |
H01L21/28;H01L21/31;H01L21/60;H01L21/768;H01L21/8247;H01L23/522;H01L23/532;H01L29/51;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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