| 摘要 |
In a method for manufacturing a "BiCMOS" semiconductor integrated circuit, a gate oxide film 110 and a polysilicon film are grown on a semiconductor substrate, and after phosphorus is doped, the polysilicon film is patterned to form gate electrodes 112a and 112b and an emitter electrode 112c. A heat treatment is performed to form an emitter diffused region 113. Phosphorus and boron are selectively implanted with a low impurity concentration, respectively, to form a LDD N- region 114 and a LDD P- region 115. Thereafter, a side wall 116 is formed, and boron is implanted into areas B and C so as to form P+ source/drain regions 117 and a graft base region 18, respectively. Phosphorus is implanted to form N+ source/drain regions 119.
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