| 发明名称 |
Structure and method for making FETs and HEMTs insensitive to hydrogen gas |
| 摘要 |
A structure and method for making HEMTs with a gate metal having a layer comprising titanium, a layer comprising vanadium over the layer comprising titanium, and a layer comprising gold over the layer comprising vanadium. Such HEMTs are insensitive to hydrogen.
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| 申请公布号 |
US5652444(A) |
申请公布日期 |
1997.07.29 |
| 申请号 |
US19950532917 |
申请日期 |
1995.09.22 |
| 申请人 |
HUGHES ELECTRONICS |
发明人 |
LE, MINH V.;SHEALY, JEFF B.;NGUYEN, LOI D. |
| 分类号 |
H01L21/285;H01L21/335;H01L29/423;H01L29/47;(IPC1-7):H01L29/47 |
主分类号 |
H01L21/285 |
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