| 摘要 |
<p>A crystal forming method comprises disposing, on a surface of a substrate or in recessed portion formed in the substrate having a surface with a low nucleation density, primary seed having a sufficient small volume to singly aggregate and a rectangular prismatic or cubic shape in which all the sides and the bottom are surrounded by an insulator in contact therewith; performing heat treatment for aggregating the primary seed to form monocrystalline seed crystal having controlled plane orientation and in-plane orientation; and selectively growing monocrystal by crystal growth treatment using the seed crystal as starting point.</p> |
