发明名称 |
Method of making a TFT having a reduced channel length |
摘要 |
A thin film transistor (TFT) for a liquid crystal display (LCD) and method of making same is disclosed, the TFT having a source and drain electrode where at least one of the source and drain includes first and second conductive layers offset from one another by a distance DELTA L so that the resulting TFT channel length LT is equal to LT=L1,2- DELTA L where L1,2 is either a channel length defined in the first conductive layer or a channel length defined in the second conductive layer. The TFT manufacturing process includes the steps of: a) providing a conductive gate layer and patterning same to form a gate electrode; b) depositing a substantially transparent conductive layer (e.g. ITO) and patterning same to form a pixel electrode; c) depositing and patterning a semiconductor layer (e.g. a-Si); a doped semiconductor contact layer; and a first source-drain conductive layer so as to form a TFT island or area; d) using a single photoresist to etch a channel in the first source-drain layer and a via in a gate insulating layer so as to expose the pixel electrode; and e) depositing and patterning a second source-drain layer over the via and the etched first source-drain layer so as to form a TFT with reduced channel length LT wherein the second source-drain layer contacts the pixel electrode through the via.
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申请公布号 |
US5650358(A) |
申请公布日期 |
1997.07.22 |
申请号 |
US19950519920 |
申请日期 |
1995.08.28 |
申请人 |
OIS OPTICAL IMAGING SYSTEMS, INC. |
发明人 |
GU, TIEER;DEN BOER, WILLEM |
分类号 |
H01L21/336;H01L29/45;H01L29/786;(IPC1-7):H01L21/465 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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