| 摘要 |
PROBLEM TO BE SOLVED: To form a gallium nitride compound semiconductor layer having a wurtzite-type crystal structure, such as gallium nitride, aluminum nitride, indium nitride, or their mixed crystal on the (100) substrate of a compound semiconductor having a zinc-blende crystal structure having an excellent cleavage characteristic. SOLUTION: A gallium nitride compound semiconductor layer (for example, a gallium nitride buffer layer 102 grown at a low temperature and a gallium nitride layer 103 grown at a high temperature) is grown on the (100) substrate of a compound semiconductor or the <=15 deg. inclined substrate of the substrate (for example, a gallium arsenide substrate 100) by a vapor growth method using the chloride of a group III element as a raw material. Therefore, the direction of the c-axis of the crystal structure of the gallium nitride compound semiconductor layer is directed to the (111)-direction of the crystal constituting the (100)-substrate or inclined from the (111)-direction by <=5 deg. and a wurtzite-type crystal structure containing no zinc-blende crystal structure can be obtained. |
