| 摘要 |
PROBLEM TO BE SOLVED: To suppress the influence of a capacitive coupling signal by evading a conflict between functions of gate layers. SOLUTION: The array 10 includes a patterned dark matrix layer 34 which is electrically connected to a fixed potential. The dark matrix material has sufficient conductivity, so the capacitive coupling signal attenuates in a time shorter than the address time of each cell 20. The dark matrix of each cell can overlap with the cell electrode at the entire periphery of the cell, the overlap area between the dark matrix and electrode is wide enough, and the part of the dielectric layer between them is thin enough, so that the formed storage capacity meets the requirements of the cell. |
