Integrated circuit with diamond insulator

摘要

PCT No. PCT/US94/02569 Sec. 371 Date Dec. 4, 1995 Sec. 102(e) Date Dec. 4, 1995 PCT Filed Mar. 9, 1994 PCT Pub. No. WO94/20985 PCT Pub. Date Sep. 15, 1994A semiconductor-on-diamond structure has a free-standing layer of diamond material that is thick enough to provide integrity for the integrated circuit and to insulate the circuit. The structure has a layer of diamond material 12 on a layer of silicon nitride 62. A device layer of semiconductor material 30 is positioned over the silicon nitride layer.