| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a light emitting diode having high luminous efficacy can be manufactured easily. SOLUTION: A bulk silicon layer 2 and a porous silicon layer 3 are formed by dipping one surface of a p- or n-type silicon substrate carrying a contact layer 1 on the other surface in a hydrofluoric acid solution (A). Then a porous player 4 doped with an impurity is formed by applying a solution containing the impurity to the surface of the porous silicon layer 3 and heat-treating the layer 3 (B). The solution containing the impurity is changed depending upon the conductivity of the silicon substrate. When the conductivity of the substrate is n-type, a solution containing the ion of a group III element is used and, when p-type, a solution containing the ion of a group V element is used. The heat- treating temperature is adjusted to 300-600 deg.C, desirably, to 500-600 deg.C. When a p-n junction is formed, a light emitting diode is manufactured by forming a contact layer 5 on the porous layer 4 by using an ordinary method. |
