| 摘要 |
An oriented conductive thin film useful as a thin film electrode or a thin film resistor may be made by coating a single crystal substrate with a metal oxide precursor solution containing an organometallic compound, and subjecting the coating layer to thermal decomposition, followed by annealing the coated substrate. The result is an epitaxial or oriented perovskite ABO3 structure oxide conductive thin film. A further layer of an epitaxial or oriented ABO3 type ferroelectric thin film can be formed on the conductive thin film.
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