| 摘要 |
PURPOSE:To obtain a positive type photoresist superior in various characteristics, such as sensitivity, resolution, residual film rate, heat resistance, and storage stability, and adapted to microfabrication by incorporating an alkali-soluble phenol resin and as a photosensitive agent a specified quinonediazidosulfonic acid ester. CONSTITUTION:The positive type resist composition contains the alkali-soluble phenol resin and as the photosensitive agent the quinonediazidosulfonic acid ester represented by formula I in which each of R<1> - R<5> ks H, halogen, 1 - 4 C alkyl, alkenyl, alkoxy, or hydroxy and A is -S-, -O-, or the like. The alkali- soluble phenol resin to be used is embodied by the condensation reaction products between phenols and aldehydes or ketones and the like, thus permitting various characteristics, such as sensitivity, resolution, residual film rate, heat resistance, and storage stability, and especially adapted to submicron microfabrication. |
