MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent short-circuit in a metal wiring layer by forming the metal wiring layer on a tungsten nitride thin film with excellent step coverage. SOLUTION: A method comprises a step of forming an insulating film 36 having a contact hole on a semiconductor substrate 31, a step of performing plasma processing of the entire surface of the substrate 31, and a step of vapor depositing a tungsten nitride thin film 42 on the plasma-processed entire surface of the substrate 31. Thus, the tungsten nitride thin film 42 has a surface smoothed by the plasma processing, and step coverage of a metal wiring layer 44 formed on the tungsten nitride thin film 42 is improved. Thus, a reliable semiconductor device can be manufactured.