VAPOR DEPOSITION DEVICE OF MOLECULAR CONTAMINANTS

摘要

PROBLEM TO BE SOLVED: To allow a diagnosis of failed wafers and an analysis and a defective generation mechanism due to contaminants by means of deposition of contaminants probable to be generated in a process manufacturing a semiconductor wafer on a basis of material and on a basis of concentration. SOLUTION: After mixing impurity gas from the gas generating means 10 and moisture from the moisture generating means 20 by a mixing means 30 with qualitative control by means of a gas adjustment valve 31 and a moisture adjustment valve 32 respectively inside a reaction chamber 50, these are supplied through a gas injection means 40. The gas injection means 40 performs vapor deposition of contaminants to the wafer 100. After finishing vapor deposition of contaminants, an exhaust part 60 is operated so as to exhaust residual gas inside a reaction chamber 50 to the outside. Thereby, a desired contaminant can be deposited on a desired region of the wafer 100 surface in a desired concentration.