发明名称 METHOD OF MEASURING ETCHING END POINT OF WET ETCHING APPARATUS HAVING CONTAINER
摘要 PROBLEM TO BE SOLVED: To provide an etching end point measuring method using pH values. SOLUTION: In this etching end point measuring method, etchant is supplied into a container, an object to be etched is placed within the container and wet etching of the object is conducted. During wet etching, the change of the pH value is measured. Using the pH value, the in the thickness of the object is calculated. When the calculated thickness change reaches a preset thickness change, it is determined that an etching end point is detected.
申请公布号 JPH09186131(A) 申请公布日期 1997.07.15
申请号 JP19960353932 申请日期 1996.12.19
申请人 L JII SEMICON CO LTD 发明人 YUN ZUN HO;SAN ZUN CHIYOI;SOKU BIN HAN
分类号 H01L21/306;G01N27/416;H01L21/66;(IPC1-7):H01L21/306 主分类号 H01L21/306
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