METHOD FOR GRINDING BACK SURFACE OF SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for grinding the back surface of the wafer by means of adhering an adhesive film having an ultraviolet hardening-type adhesive layer on the surface of the semiconductor wafer. SOLUTION: (a) An acrylic polymer 100 weight part whose quantity of polymerized carbon-carbon double bonds is 2×10<20> -2×10<21> in 1g of polymer in polymer having polymerized carbon-carbon double bond and a functional group which can become a bridge point in molecules, (b) a heat cross linking agent 0.1-10 weight part having more than two bridging functional group in one molecule and (c) an intra-molecule connection cleavage type photopolymerization start agent 0.1-3 weight part is adhered to the surface of the semiconductor wafer. The back of the wafer is ground. The ultraviolet rays whose light quantity if 300-3000mJ/cm<2> are emitted and the adhesive film is peeled off.