ORGANIC METAL VAPOR PHASE GROWING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a vapor phase growing method for growing carbon-doped GaAs or AlGaAs as halomethane or carbon hydride halide as dopant on the AlGaAs or AlAs. SOLUTION: With halomethane (CBr4 ) or carbon hydride halide as dopant, carbon-doped GaAs or AlGaAs is grown on AlGaAs or AlAS by delaying the time point of starting to supply halomethane (CBr4 ) or carbon hydride halide from the time point of starting to supply an Al source and a Ga source to the time point of growing nondoped GaAs or AlGaAs to 0.5 to 2nm.