发明名称 |
MEMORY MODULE USING PARTIALLY DEFECTIVE MEMORY ELEMENT |
摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the production cost by using a memory cell partly defective so as to configure a memory module. SOLUTION: 2M×8-bit 16MDRAM elements U0-U3 partially defective are mounted on a substrate 25 and pins of each memory element leading to a pin A10 are interconnected by a wire 30. The address pin A10 among address pins of the module is connected to a pad 30B and the line 30 is connected to an option pad 30A. The option pad 30A may be connected to a power terminal Vcc or to a ground terminal GND. Among 1M array of the memory elements U0-U3, in the case of the occurrence of a defect in the array whose A10 is '0', the option pad 30 is connected to the Vcc and only 1M arrays whose A10 corresponds to '1' are selected.</p> |
申请公布号 |
JPH09185898(A) |
申请公布日期 |
1997.07.15 |
申请号 |
JP19960298924 |
申请日期 |
1996.11.11 |
申请人 |
SAMSUNG ELECTRON CO LTD |
发明人 |
JIYO SHIYOUCHIN;RI KOKUSOU |
分类号 |
G11C11/401;G11C5/00;G11C8/00;G11C29/00;G11C29/04;G11C29/44;(IPC1-7):G11C29/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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