| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of a bridging between a source/drain region and a gate electrode. SOLUTION: A gate insulating film 11, a gate electrode 11 and a pattern, having an insulating film (disposable) of arbitrary layer, are formed on a semiconductor substrate 1, ions are implanted using said pattern as a mask, a low density impurity region 4 is formed, and the first side wall spacer 13 is formed on both side faces of the pattern. Ions are implanted using the first side wall spacer as a mask, a high density impurity region 6 is formed, the second side wall spacer 14 is formed on the side of the first side wall spacer 13 and on the gate electrode 11, a silicide layer 18, which is a metal and silicon reaction layer, and a polysilicide layer 19 are formed on the gate electrode 11 and drain/ source regions 4 and 6, and the first side wall spacer 13 and the second side wall spacer 14 are removed. |
