| 摘要 |
This provides a method forming charge storing electrode of capacitor, which comprises the steps of forming a semi-spherical polysilicon film and doping thereof, depositing a doped amorphous silicon film on the exterior of the polysilicon film and patterning it as a cylinder, and etching an activated doped silicon and an inactivated doped amorphous silicon by selective etching, so that the effective surface area of the capacitor is increased.
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