| 摘要 |
In a data reading circuit, an output signal from a sense amplifier which outputs a signal having a level corresponding to a potential difference between an input/output line pair is output through a first tri-state inverter and a second tri-state inverter. An NMOS transistor for precharging is provided between an output node of the first tri-state inverter and an output node (N3) of the sense amplifier. When the sense amplifier and the first tri-state inverter are inactivated, this transistor is also inactivated. As a result, an output node of the second tri-state inverter and an output node of the sense amplifier are connected with this transistor therebetween, so that the output node of the sense amplifier is precharged to an intermediate potential. According to the structure as described above, in the data reading circuit, a fast access is implemented, operation of the circuit is stabilized, and the lack of balance between the access times is suppressed.
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