| 摘要 |
PROBLEM TO BE SOLVED: To accurately grasp the consumption of target by further adding correction according to eroded quantity to the product of electric power source power and deposition time for each process and to rationalize the timing of replacement of target and also to improve the use efficiency of target, at the time of performing plural sputtering processes continuously by using the same target and changing reactant gas. SOLUTION: At the time of forming a tight barrier layer consisting of a duplex layer of Ti and TiN or TiON on a layer insulation film on the surface of a wafer, a continuous two-stage process, consisting of the formation of a Ti layer by introduction of Ar gas and the formation of a TiN or TiON layer by switching the introduced gas to a gaseous mixture of Ar and N2 , is adopted. At this time, the consumption of the Ti target as a common target is previously computed from sputtering treatment conditions to determine an integrated value Q, and the replacement of the target is performed at the point of time when the data under processing conform to the integrated value Q. Further, the integrated value Q is computed by the use of the following numerical expression: Q=W1×t1×K1+W2×t2×K2.
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