| 摘要 |
A method of fabricating a nonvolatile semiconductor memory device includes the steps of forming a first insulating layer on a first conductivity type semiconductor substrate, forming a first conductive layer on the first insulating layer and patterning it to form a first floating gate, sequentially forming a second insulating layer and second conductive layer on the first floating gate and patterning them to form a control gate, forming a third insulating layer on the overall surface of the substrate, selectively etching the third insulating layer to form a contact hole exposing a predetermined portion of the first floating gate, forming a third conductive layer on the overall surface of the substrate and patterning it to form a second floating gate connected to the first floating gate through the contact hole, and ion-implanting a second conductivity type impurity to form source and drain regions in a predetermined portion of the substrate.
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