发明名称 Magnetowiderstandseffekt-Element
摘要 A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers (2, 3). The magnetic layers (3) containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto. <IMAGE>
申请公布号 DE69219936(D1) 申请公布日期 1997.07.03
申请号 DE1992619936 申请日期 1992.03.27
申请人 KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP 发明人 SAITO, YOSHIAKI, C/O INTELLECTUAL PROPERTYDIV., MINATO-KU, TOKYO 105, JP;OKUNO, SHINO, C/O INTELLECTUAL PROPERTY DIV., MINATO-KU, TOKYO 105, JP;INOMATA, KOICHIRO, C/O INTELLECTUAL PROPERTYDIV., MINATO-KU, TOKYO 105, JP
分类号 G01R33/09;H01L43/10;(IPC1-7):H01L43/10 主分类号 G01R33/09
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