发明名称 Semiconductor field effect transistor with large substrate contact region
摘要 In a MOS-type semiconductor device having a semiconductor substrate (1), a drain region (3-2, 3-4), a source region (3-1, 3-3, 3-3', 3-5), and a gate electrode (6-1, 6-2) between the drain region and the source region, a substrate contact region (7'-1, 7'-2, 7'-3) of a conductivity type the same as that of the semiconductor substrate is formed adjacent to the source region, and is wider than the source region and the drain region. <IMAGE>
申请公布号 EP0708486(A3) 申请公布日期 1997.07.02
申请号 EP19950116348 申请日期 1995.10.17
申请人 NEC CORPORATION 发明人 YUKAWA, AKIRA
分类号 H01L21/761;H01L21/8238;H01L27/02;H01L27/08;H01L27/092;H01L29/06;H01L29/10;H01L29/417 主分类号 H01L21/761
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