摘要 |
In a MOS-type semiconductor device having a semiconductor substrate (1), a drain region (3-2, 3-4), a source region (3-1, 3-3, 3-3', 3-5), and a gate electrode (6-1, 6-2) between the drain region and the source region, a substrate contact region (7'-1, 7'-2, 7'-3) of a conductivity type the same as that of the semiconductor substrate is formed adjacent to the source region, and is wider than the source region and the drain region. <IMAGE> |