发明名称 Failure memory device
摘要 A failure memory device for compressing, in bit, failure data of a multi-bit memory under test to store the compressed failure data in a failure memory is provided, which is capable of generating a mask data. Failure data obtained from the logical comparison results of data written in a four bit memory under test are supplied to AND-OR circuits 271-274 of a compression circuit 30 through input terminals 211-214 respectively. In each AND-OR circuit, ANDs between the failure data and four bit compression data set in registers 261-264 are performed respectively, and the ANDs are ORed. The ORed outputs of the respective AND-OR circuits are supplied to input pins 221-224 of a failure memory 17. Readout data from output pins 231-234 of the failure memory are supplied to AND-OR circuits 311-314 of an expansion circuit 25 respectively. In the AND-OR circuit 311, ANDs between the read out data and the first bit data of the registers 261-264 are performed respectively and then the ANDs are ORed, and in the remaining AND-OR circuits 312-314, ANDs between the read out data and the second bit data through the fourth bit data of the registers 262-264 are performed respectively and the ANDs in each of the AND-OR circuits 312-314 are ORed. The ORed outputs of the respective AND-OR circuits are supplied to output terminals 241-244 as mask data.
申请公布号 US5644578(A) 申请公布日期 1997.07.01
申请号 US19960648244 申请日期 1996.05.15
申请人 ADVANTEST CORPORATION 发明人 OHSAWA, TOSHIMI
分类号 G01R31/28;G01R31/3193;G11C29/00;G11C29/40;G11C29/44;G11C29/56;(IPC1-7):G06F11/00 主分类号 G01R31/28
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