发明名称 Bipolarity electrostatic discharge protection device and method for making same
摘要 A circuit and method for protecting an integrated circuit during positive and negative ESD events. During both positive and negative ESD events, the circuit conducts ESD current through a turned on device. The circuit includes a pad, a voltage supply rail, a field effect transistor connected across the pad and the voltage supply rail, and an enabling circuit connected across the gate of the field effect transistor and the pad. During a positive ESD event, the field effect transistor is turned on to provide a conductive path between the pad and the voltage supply rail. During a negative ESD event, the bipolar transistor inherent in the field effect transistor is turned on to provide a conductive path between the pad and the voltage supply rail.
申请公布号 US5644459(A) 申请公布日期 1997.07.01
申请号 US19950551995 申请日期 1995.11.02
申请人 INTEGRATED DEVICES TECHNOLOGY 发明人 LIEN, CHUEN-DER
分类号 H01L27/02;H03K19/003;(IPC1-7):H02H9/00 主分类号 H01L27/02
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