| 摘要 |
PROBLEM TO BE SOLVED: To constitute a real guide type semiconductor light emitting device having an excellent crystallizability and laser characteristics within an AlGa InP base semiconductor light emitting device. SOLUTION: Within an AlGaInP base semiconductor light emitting device at least having the first conductivity type the first clad layer 3, an active layer 4 and the second conductivity type the second clad layer 5, a striped ridge 8 is formed on the second clad layer 5 so that a current strangulated layer 19 made of the first conductivity type AlGaAs having larger band gap and smaller refractive index may be formed by filling the trenches 7 formed on both sides of a striped ridge 8 holding this ridge 8 with the current strangulated layer 19. |
