| 摘要 |
PROBLEM TO BE SOLVED: To obtain the properties so that specific resistance is very high, the reduction in saturation magnetic-flux density is less and excellent magnetic characteristics can be obtained in a magnetic thin film by specifying the containing rate of phosphor, and specifying the specific resistance. SOLUTION: On a substrate 10, a magnetic thin film 20 is formed by a nonelectrolytic plating method. The magnetic thin film 20 contains as the main components at least two or more kinds of metals selected among Ni, Fe and Co and P (phosphor). The containing rate of P in the magnetic thin film 20 is set at 2at.% or more and 25at.% or less. Then, the specific resistance is set at 300μΩcm or more, and further the film property of 1000μΩcm or more is provided. Furthermore, as a means for increasing the specific resistance of the film 20, it is desirable to contain Cr (chromium) of 0.01-1at.%. Furthermore, the coersive force of 3Oe or less is desirable.
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