| 摘要 |
PROBLEM TO BE SOLVED: To realize a further highly integrated semiconductor device, avoiding the increase of the number of its manufacturing processes. SOLUTION: On a semiconductor substrate 1, an insulation film 4 is formed to form selectively a groove 4a and contact hole 4b therein. Then, burying tungsten in both the groove 4a and hole 4b, a buried wiring 5 and plug 6 are formed respectively, forming a tungsten film on the insulation film 4. Subsequently, patterning the foregoing tungsten film, a wiring 7b is formed. Still, diffusion layers 2 on the surface of the substrate 1 are interconnected electrically by the buried wiring 5. |
