THIN FILM TRANSISTOR HAVING REDUCED LEAKAGE CURRENT AND METHOD OF FABRICATING THE SAME,申请号KR1019930022946-传众专利搜索

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发明名称	THIN FILM TRANSISTOR HAVING REDUCED LEAKAGE CURRENT AND METHOD OF FABRICATING THE SAME
摘要
申请公布号	KR1019970010685(B1)	申请公布日期	1997.06.30
申请号	KR1019930022946	申请日期	1993.10.30
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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